FQA11N90

Type Designator: FQA11N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 11.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 72 nC

Rise Time (tr): 135 nS

Drain-Source Capacitance (Cd): 260 pF

Maximum Drain-Source On-State Resistance (Rds): 0.96 Ohm